This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.
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|Size: ||17.2 MB|
|Publisher: ||CRC Press|
|Date published: || 2012|
|ISBN: ||9789814364034 (DRM-PDF)|
|Read Aloud: ||not allowed|
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