First introduced about a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first edition are now standard in modern facilities. Reflecting those advances, this edition delves into the practical aspects of interconnections for manufacturing. It examines the interconnect and fabrication technologies now available, with an examination of future prospects for the field.
What's in this Edition: Detailed discussion of electrochemical equipment for plating copper Information on tools used for evaporation, chemical vapor deposition, and plasma processes Emphasis on measurement of mechanical and thermal properties of insulators Methods for characterizing porous dielectric thin films Greater focus on integration issues and properties of titanium, cobalt, and nickel silicides Process schemes based on the increased need for borderless contact gates and source/drain Expanded discussion on choices for low-dielectric insulators Concentration on electroplated copper, especially morphology of plated films and their properties Developments in thin film liners and barriers Expanded material on copper reliability
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|Size: ||12.3 MB|
|Publisher: ||CRC Press|
|Date published: || 2006|
|ISBN: ||9781420017656 (DRM-PDF)|
|Read Aloud: ||not allowed|
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