Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
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|Size: ||31.3 MB|
|Publisher: ||Academic Press|
|Date published: || 1981|
|ISBN: ||9781483214771 (DRM-PDF)|
|Read Aloud: ||not allowed|