Applied Solid State Science, Supplement 2: Silicon Integrated Circuits, Part A focuses on MOS device physics.
This book is divided into three chapters-physics of the MOS transistor; nonvolatile memories; and properties of silicon-on-sapphire substrates devices, and integrated circuits. The topics covered include the short channel effects, MOSFET structures, floating gate devices, technology for nonvolatile semiconductor memories, sapphire substrates, and SOS integrated circuits and systems. The MOS capacitor, MIOS devices, and SOS process and device technology are also deliberated.
This publication is a good source for students and individuals interested in MOS-based integrated circuits.
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|Size: ||36.7 MB|
|Publisher: ||Academic Press|
|Date published: || 1981|
|ISBN: ||9781483273112 (DRM-PDF)|
|Read Aloud: ||not allowed|