SIMON 2.0 Educational

SIMON is a sophisticated multipurpose simulator for single-electron devices and circuits. It features a graphical circuit editor embedded in a graphical user interface as well as the simulation of co-tunnel events and a single step interactive analyses mode. It supports energy dependent density of states and is able to calculate stability plots.

Features of SIMON 2.0:

• STABILITY PLOT
  • traditional stability plot with two voltages as x- and y-axis
  • one axis can be the temperature
  • one or both axis can be a capacitance or resistance
  • differentiation in x or y direction possible
• NORMAL RESISTORS
  • normal resistors allow the modeling of more complex and realistic circuits
• CURRENT SOURCES
  • current sources can be specified with a certain charge-granularity, which allows the modeling of electron injectors/pumps/turnstiles in a very easy manner
• ENERGY DEPENDENT DENSITY OF STATES
  • The tunnel model has been improved by incorporating three kinds of density of states functions
    • constant with optional bandgap (metallic)
    • square-root with bandgap (semiconductor-like)
    • x/(x²-1)^1/2 with bandgap (superconductor-like)
  • discrete energy levels are modeled as gaussian functions, with mean, width, and height.
• SUPPORT FOR SUPERCONDUCTING TUNNEL JUNCTIONS
  • quasiparticle tunneling
• FULL SUPPORT FOR LINUX
  • SIMON is shipped in a software package where all necessary libraries (tcl/tk) are wrapped into the application. Hence no need to install any 3rd party tools to run SIMON on Linux. The installation is as easy as copying a file into a subdirectory.
• EASY TO USE
  • simple automatic installation for Windows operating systems
  • graphical user interface
  • graphical circuit editor (drag and drop assembly of circuits; few mouse clicks and your circuit is assembled)
  • graphical visualization of simulation results (you can plot many graphs in one diagram; compare results from different simulations)
• CO-TUNNELING
  • co-tunneling is simulated up to a user specified order
  • two different co-tunnel simulation algorithms are available
• INTERACTIVE SINGLE-STEP MODE
  • single electrons can be forced to tunnel through particular tunnel junctions in an interactive fashion
  • the system energy, all node voltages, and all node charges are updated automatically

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